期刊:Nano Letters [American Chemical Society] 日期:2003-07-02卷期号:3 (8): 1103-1106被引量:504
标识
DOI:10.1021/nl0342491
摘要
We report our experimental studies of surface-related emission in highly luminescent CdSe quantum dots (QDs) with controlled quantum yield and photooxidation by time-resolved photoluminescence measurements. This kind of surface-related emission, with a radiative lifetime of tens of nanoseconds, implies the involvement of surface states in the carrier recombination process of such highly luminescent CdSe QDs.