卤化物
钙钛矿(结构)
带隙
光致发光
半导体
材料科学
替代(逻辑)
密度泛函理论
光电子学
直接和间接带隙
宽禁带半导体
凝聚态物理
无机化学
结晶学
化学
计算化学
物理
计算机科学
程序设计语言
作者
Daniel B. Straus,R. J. Cava
标识
DOI:10.26434/chemrxiv-2022-bctjk-v2
摘要
The ability to continuously tune the band gap of a semiconductor allows its optical properties to be precisely tailored for specific applications. We demonstrate that the band gap of the halide perovskite CsPbBr3 can be continuously widened through homovalent substitution of Sr2+ for Pb2+ using solid-state synthesis, creating a material with the formula CsPb1-xSrxBr3 (0 ≤ x ≤ 1). Sr2+ and Pb2+ form a solid solution in CsPb1-xSrxBr3. Pure CsPbBr3 has a band gap of 2.29(2) eV, which increases to 2.64(3) eV for CsPb0.25Sr0.75Br3. The increase in band gap is clearly visible in the color change of the materials and is also confirmed by a shift in the photoluminescence. Density-functional theory calculations support the hypothesis that Sr incorporation widens the band gap without introducing mid-gap defect states. These results demonstrate that homovalent B-site alloying can be a viable method to tune the band gap of simple halide perovskites.
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