退火(玻璃)
辐照
材料科学
碳化硅
电子能量损失谱
离子
透射电子显微镜
硅
光谱学
分析化学(期刊)
电子束处理
化学
纳米技术
光电子学
复合材料
物理
有机化学
色谱法
量子力学
核物理学
作者
Guoqiang You,Sili Wang,Haiyun Zhang,Weihong Li,Xueli Guo,Shangmin Ru,Bingsheng Li
出处
期刊:Crystals
[MDPI AG]
日期:2022-05-11
卷期号:12 (5): 687-687
标识
DOI:10.3390/cryst12050687
摘要
A good understanding of the chemical disorder in silicon carbide (SiC) after ion irradiation is crucial for evaluating structural stability in both semiconductor and nuclear power systems. In this study, 6H-SiC single-crystal was irradiated with 500 keV He and 2.5 MeV Fe ions at room temperature, followed by annealing at 1500 °C for 2 h. The chemical disorders were investigated by electron energy-loss spectroscopy with the transmission electron microscopy at 200 kV. Facetted voids were found in the end region of the damaged layer. Compared with the substrate region, the Si at.% was lower, while the values of C and O at.% were higher, in particular in inner voids. SiCOx (x < 1) bonds at the inner surface of the voids were detected. The energy losses of Si, C edges shifted to be lower in the damaged layer. The possible reason is discussed, and the research results will be used for understanding the ion irradiation-induced damage in SiC.
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