Multifunctional MoTe2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

Abstract The “Internet‐of‐Things”‐based information society requires the devices to possess high scaling capability as well as rich functionalities. Hybrid systems coupling 2D semiconductors and functional ferroelectrics are attracting increasing attention as complementary devices to the existing silicon systems due to their outstanding electronic and optoelectronic performances. In this work, interfacial states are introduced on the ferroelectric Hf 0.5 Zr 0.5 O 2 thin film during the annealing process. Utilizing the synergetic effect of ferroelectric polarization and charge trapping behavior, a multifunctional 2D Fe‐FET is demonstrated, exhibiting reliable memory properties, tunable synaptic functions, and reconfigurable photodetection behaviors in one single device. Among them, multiple storage levels are achieved with a long retention time. Flexible plasticity including short‐term plasticity (STP)/long‐term plasticity (LTP) is emulated successfully, and the excellent emulated synaptic behaviors also contribute to the pattern recognition accuracy of ≈81% in artificial neural network simulations. Furthermore, the ferroelectric polarization‐dependent optoelectronic response is observed, making it promising for the optoelectronic logic device application. The results pave the way for the fabrication of high‐density data process systems with various functions.