AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology

Be closer to real product operation, DC TDDB stress convert to AC TDDB could be one choice to wrestle with advanced node shrink limitation. The physical explanation of AC TDDB improvement is successfully interpreted through the analysis of oxide trap generation with HK/IL gate stack in advanced node FinFET technology using SILC spectrum methodology. It is found that AC TDDB improvement is due to more charge de-trap. NMOS show less shallow and deep electron trap generation on HK and PMOS show less hole trap generation on IL during AC waveform transition.