成核
结晶度
材料科学
化学气相沉积
图层(电子)
氮化物
半最大全宽
外延
分析化学(期刊)
蚀刻(微加工)
等离子体刻蚀
等离子体
薄膜
化学工程
化学
纳米技术
光电子学
复合材料
物理
有机化学
量子力学
工程类
作者
Yanhui Xing,Shengyuan Dong,Xuan Zhang,Yao Zhang,Jun Han,Xuemin Zhang,Li Zhang,Baoshun Zhang,Zhongming Zeng
标识
DOI:10.1021/acs.cgd.2c01307
摘要
The crystallinity of nucleation layers has significant influence on the crystallinity of aluminum nitride (AlN) epilayers. In this work, the etching effect of hydrogen (H) plasma was used to improve the nucleation-layer crystallinity. AlN nucleation layers were first cooled in a H-plasma atmosphere; then, AlN films were deposited on the processed nucleation layers, and the whole epitaxial process was carried out in high-temperature microwave plasma chemical vapor deposition (MPCVD) without the participation of ammonia. X-ray rocking curves (XRCs) showed that the cooling process obviously improved the crystal quality of AlN films, which was attributed to the preferential etching effect of H plasma on low-crystallinity nucleation islands. When a H2 flow rate of 135 sccm was used to process the nucleation layer, the AlN film with the narrowest (002) XRC full width at half-maximum (FWHM) of 86 arcsec was obtained. Possible growth mechanisms were suggested for the observations.
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