材料科学
薄膜
掺杂剂
溅射沉积
兴奋剂
溅射
碲
带隙
光电子学
分析化学(期刊)
纳米技术
冶金
化学
色谱法
作者
Devendra Kumar,Chiranji Lal,Dharm Veer,Deshraj Singh,Pawan Kumar,Ram S. Katiyar
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2023-04-05
卷期号:98 (5): 055930-055930
被引量:2
标识
DOI:10.1088/1402-4896/accabc
摘要
Abstract CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
科研通智能强力驱动
Strongly Powered by AbleSci AI