Highly Sensitive Temperature Sensing Using the Silicon Vacancy in Silicon Carbide by Simultaneously Resonated Optically Detected Magnetic Resonance

Quantum sensors based on silicon vacancies (${V}_{\text{Si}}$) in SiC are crucial for precise device design and simulations, but their practical application is hampered by the low sensitivity of temperature. This study introduces a temperature measurement protocol that increases signal intensity by an order of magnitude. By diverting part of the ground state optically detected magnetic resonance signal for temperature measurement, and leveraging simultaneous resonance of the ground state and excited state, the protocol significantly boosts performance. This leap in measurement sensitivity could make ${V}_{\text{Si}}$-based quantum sensors far more effective and versatile.