铁电性
材料科学
原子层沉积
正交晶系
哈夫尼亚
纳米技术
光电子学
图层(电子)
化学
电介质
结晶学
晶体结构
复合材料
立方氧化锆
陶瓷
作者
Jin-Hyun Kim,Takashi Onaya,Hye Ryeon Park,Yong Chan Jung,Dan N. Le,Minjong Lee,Heber Hernández-Arriaga,Yugang Zhang,Esther H. R. Tsai,Chang‐Yong Nam,Toshihide Nabatame,Si Joon Kim,Jiyoung Kim
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2023-09-07
卷期号:5 (9): 4726-4745
标识
DOI:10.1021/acsaelm.3c00733
摘要
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due to their promising properties and opportunities. To achieve such ferroelectric fluorite structure oxides at low temperatures (below 400 °C), stabilizing the metastable noncentrosymmetric orthorhombic phase is crucial. This review provides a comprehensive overview of atomic layer deposition (ALD) techniques for obtaining the orthorhombic phase for low-temperature ferroelectric applications. We discuss optimization of the ALD process for synthesizing high-quality, low-temperature crystallizing ferroelectric films, including doping, precursor and oxygen source selection, deposition temperature, and interface engineering. In addition, the techniques for stabilizing the ferroelectric phase by regulating the thermal budget and stress with various annealing methods and stressors are discussed. The review focuses on different techniques to reduce the thermal budget required to acquire ferroelectricity, making hafnia-based ferroelectric materials compatible with back-end-of-line and three-dimensional integration for a variety of future applications, including flexible electronics applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI