光电探测器
半导体
光电子学
带隙
材料科学
工程物理
物理
作者
Lixia Wang,Shengming Xu,Jiangang Yang,Hui Huang,Zhe Huo,Jing Li,Xin Xu,Feng Ren,Yunbin He,Yaping Ma,Weifeng Zhang,Xudong Xiao
出处
期刊:ACS omega
[American Chemical Society]
日期:2024-06-05
卷期号:9 (24): 25429-25447
标识
DOI:10.1021/acsomega.4c02897
摘要
Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, AlxGa1–xN/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind photodetectors (SBPDs). This review comprehensively examines recent advancements in UWBG semiconductor-based SBPDs across various device architectures, encompassing photoconductors, metal–semiconductor-metal photodetectors, Schottky photodiodes, p-n (p-i-n) photodiodes, phototransistors, etc., with a systematic introduction and discussion of their operational principles. The current state of device performance for SBPDs employing these UWBG semiconductors is evaluated across different device configurations. Finally, this review outlines key challenges to be addressed, aiming to steer future research endeavors in this critical domain.
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