电阻随机存取存储器
热的
生产线后端
材料科学
串扰
计算机科学
工程物理
光电子学
电子工程
图层(电子)
纳米技术
电气工程
电压
工程类
物理
气象学
作者
Daniel Schön,Stephan Menzel
标识
DOI:10.1109/imw59701.2024.10536969
摘要
Upcoming computing and market-ready storage technologies must not only become more powerful, but also more energy-efficient to meet future challenges. A promising solution are BEOL-integrated RRAM arrays. Research is ongoing to achieve ever higher device densities on ever smaller technology nodes. However, with shrinking feature size, thermal management is becoming increasingly important, especially with regard to temperature-accelerated switching.In this work, a 3D electrothermal model of an 8x8 RRAM array based on a 40 nm RRAM process is used to investigate the thermal effects on a selected device itself as well as on the adjacent RRAM cells. The study should help to better understand the thermal behavior in dense RRAM arrays especially for their integration in future scaled nodes. We show that thermal crosstalk can be avoided if the devices are placed far away from the shared bit line and the devices are separated by a heat blocking layer. Encapsulated heat also results in more energy-efficient switching.
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