光电流
材料科学
纳米片
相(物质)
异质结
半导体
面(心理学)
微观结构
光电子学
纳米技术
光电阴极
化学工程
电子
化学
复合材料
量子力学
社会心理学
五大性格特征
物理
工程类
有机化学
人格
心理学
作者
Gangyang Lv,Liyuan Long,Xianchen Wu,Qian Yu,Gang Zhou,Feng Pan,Zhenyu Li,Dunhui Wang
标识
DOI:10.1016/j.apsusc.2022.155335
摘要
Exploring semiconductor photoanode with low photocarrier recombination rate and high surface redox reaction rate is eternal pursuit of PEC energy conversion. Herein, intrinsic microstructure regulation strategy substitutes conventional heterostructure establishing to modulate photocarrier dynamics of layered semiconductor photoanode. Firstly, an improved in-situ growth method is designed to construct vertically aligned ZnIn2S4 nanosheet array photoanode with highly exposed surface area and prominent two-dimensional (2D) feature for optimized carrier dynamics at interface with electrolyte. Secondly, controlled phase transition from hexagonal phase ZnIn2S4 (H-ZIS) to rhombohedral phase ZnIn2S4 (R-ZIS) is realized accompanied with evidently enhanced 2D feature via regulating ethanol ratio in precursor solvent, making it highly adjustable to construct two-phase-coexisting 2D photoanode ([email protected]). Introducing R-ZIS to construct homostructure with H-ZIS not merely integrates more advantageous surface activity and photo absorption of R-ZIS, but more importantly realizes highly efficient real space separation of photogenerated electron-hole pairs via directional interfacial photocarrier migration between two phases. The optimum 2D [email protected] achieves excellent PEC performance with photocurrent of 3.1 mA cm−2 at 1.2 VRHE, IPCE reaching 40 % and a record ABPE of 2.65 % at 0.36 VRHE. Such phase and facet modulation strategy will inform microstructure design and optimization of other layered metal sulfide for next-generation photoanodes.
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