收发机
电感器
发射机
电子工程
带宽(计算)
放大器
电气工程
均衡(音频)
比克莫斯
电容
带宽扩展
前端和后端
计算机科学
CMOS芯片
频道(广播)
工程类
晶体管
物理
电信
电压
数字信号处理
电极
量子力学
音频信号
操作系统
作者
Xiongshi Luo,Xuewei You,Jiahan Fu,Zhenghao Li,Liping Zhong,Taiyang Fan,Zhang Qiu,Wenbo Xiao,Yong Chen,Quan Pan
标识
DOI:10.1109/esscirc55480.2022.9911452
摘要
This paper presents a 112-Gb/s single-ended (SE) PAM-4 transceiver front-end for the reach-extension module in a 130 nm SiGe BiCMOS technology. The transmitter front-end is based on a differential-to-SE driver where the negative capacitance scheme is introduced to extend its bandwidth. The receiver front-end features a low-mismatch SE-to-differential (S2D) amplifier and an inductor-reuse continuous-time linear equalizer (CTLE). In the S2D, both the asymmetric reused inductor and capacitance compensation techniques are implemented to eliminate the mismatch at the pseudo-differential outputs. In the CTLE, both the inductor reuse and boosted current reuse techniques are adopted to save area, and further boost the maximum peaking frequency and equalization range. Our SE link demonstrates the highest 112-Gb/s PAM-4 data rate at a 20-dB channel loss with an energy efficiency of 1.81 pJ/bit.
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