材料科学
欧姆接触
电极
光电子学
肖特基二极管
悬空债券
热传导
图层(电子)
硅
纳米技术
复合材料
二极管
化学
物理化学
作者
Zhen Fei Zhang,Hai Xia Gao,Mei Yang,Peng Jiang,Xiao Hua,Yin Tang Yang
摘要
This letter studies the effect of the thickness of the top electrode on the performance of a SiNx resistive switching layer. We fabricated six devices with Ta electrodes of different thickness values (8 nm, 10 nm, 15 nm, 30 nm, 40 nm, and 50 nm) in a Ta/SiNx/Pt structure and then systematically investigated their performance. The high electrode thickness devices show stable and self-compliant bipolar resistive switching characteristics. In contrast, low electrode thickness devices display unstable RS behavior and have a high set voltage. In the low resistance state region, the Ta/SiNx/Pt devices obey Ohmic conduction, while in the high resistance state region, the conduction mechanism is Schottky emission. To explain the different RS behavior in the two device types, a nitrogen-ion-based model has been presented. According to this model, the device with a thicker top electrode has a stronger nitrogen accommodation ability, while the migration of nitrogen ions and silicon dangling bonds dominates conductive behavior.
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