卢瑟福背散射光谱法
质谱法
分析化学(期刊)
材料科学
硅
校准
离子
检出限
原子质量
校准曲线
原子序数
基质(化学分析)
离子注入
二次离子质谱法
化学
原子物理学
薄膜
物理
纳米技术
光电子学
复合材料
量子力学
有机化学
色谱法
作者
CB Vartuli,FA Stevie,B. M. Purcell,A Scwhitter,B.B. Rossie,S. D. M. Brown,TL Shofner,SD Anderson,JM McKinley,RB Irwin
标识
DOI:10.1017/s1431927600027070
摘要
Energy Dispersive Spectrometry (EDS) is an ubiquitous method of elemental analysis for SEM, TEM, and STEM applications. The elements of interest are generally quantified without standards using theoretical calculations or by using standards that are high purity specimens of the elements measured. However, EDS is often used to determine a small percentage of an element in a matrix. The accuracy and limit of detection of these low concentration measurements has not been established. An earlier report proved the concept that a cross section high dose BF 2 implanted specimen could provide a standard for EDS measurement of F. This study extends this quantification approach to transition elements of importance to the semiconductor industry. The Fe and Co standards were created by high dose ion implantation. For ions implanted into silicon, a dose of lxl0 16 atoms/cm 2 results in a peak concentration of approximately lxl0 21 atoms/cm 3 or 2% atomic. The exact concentration can be determined using methods such as Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS).
科研通智能强力驱动
Strongly Powered by AbleSci AI