蓝宝石
外延
材料科学
渗氮
光电子学
平面(几何)
相(物质)
极地的
金属有机气相外延
氮化物
结晶学
光学
图层(电子)
激光器
纳米技术
化学
几何学
物理
数学
有机化学
天文
作者
Masayoshi Adachi,Hiroyuki Fukuyama
标识
DOI:10.1002/pssb.201700478
摘要
Growth of non‐polar AlN layers is important to realize high‐efficiency deep‐ultraviolet light‐emitting diodes. In this study, a ‐plane AlN layers are fabricated by a combination of thermal nitridation and Ga–Al liquid‐phase epitaxy (LPE). Thermal nitridation at 1603 and 1623 K provides a ‐plane AlN thin films with smooth surfaces on r ‐plane sapphire substrates. However, these AlN films contain a double domain structure. Nitridation of r ‐plane sapphire with an off‐cut angle can effectively eliminate the double domain structure. Moreover, a ‐plane AlN films are grown homoepitaxially on the nitrided r ‐plane sapphire substrates by Ga–Al LPE. Thus, a single‐domain non‐polar AlN film is successfully grown on nitrided r ‐plane sapphire with an off‐cut angle.
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