Analysis of thermal characteristics based on a new type diode laser packaging structure

In order to improve the thermal characteristics of single-chip semiconductor lasers and increase the output power of the device, a new type of vertical packaging structure of heat sink is proposed and analyzed. The heat sink retains the advantages of simplicity and being easy to apply, and the performance of heat dissipation has been improved obviously. The new heat sink structure is believed to be more suitable for packaging of the high-power semiconductor laser chips by heat conduction. Finite-element thermal analysis was used to simulate the thermal field distribution and thermal vector distribution in the conventional structure and the new structure. The simulation results show that the thermal resistance of the conventional structure is 2.0  K/W and the thermal resistance of the new heat sink is less than 1.6  K/W. The theoretical calculation results show that the output power of the packaged laser by new heat sinks can be significantly improved.