卤化物
化学
纳米晶
掺杂剂
兴奋剂
半导体
钙钛矿(结构)
锰
带隙
离子
纳米技术
杂质
化学物理
无机化学
材料科学
光电子学
结晶学
有机化学
作者
Wenyong Liu,Qianglu Lin,Hongbo Li,Kaifeng Wu,István Robel,Jeffrey M. Pietryga,Victor I. Klimov
摘要
Impurity doping has been widely used to endow semiconductor nanocrystals with novel optical, electronic, and magnetic functionalities. Here, we introduce a new family of doped NCs offering unique insights into the chemical mechanism of doping, as well as into the fundamental interactions between the dopant and the semiconductor host. Specifically, by elucidating the role of relative bond strengths within the precursor and the host lattice, we develop an effective approach for incorporating manganese (Mn) ions into nanocrystals of lead-halide perovskites (CsPbX3, where X = Cl, Br, or I). In a key enabling step not possible in, for example, II-VI nanocrystals, we use gentle chemical means to finely and reversibly tune the nanocrystal band gap over a wide range of energies (1.8-3.1 eV) via postsynthetic anion exchange. We observe a dramatic effect of halide identity on relative intensities of intrinsic band-edge and Mn emission bands, which we ascribe to the influence of the energy difference between the corresponding transitions on the characteristics of energy transfer between the Mn ion and the semiconductor host.
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