激光器
量子点
偶极子
物理
原子物理学
极化(电化学)
杂质
电子
材料科学
凝聚态物理
光学
光电子学
量子力学
化学
物理化学
作者
M.G. Barseghyan,A.A. Kirakosyan,D. Laroze
标识
DOI:10.1016/j.optcom.2016.09.037
摘要
The intraband optical absorption have been investigated in the presence of hydrogenic donor impurity in GaAs/GaAlAs quantum dot and quantum ring in the intense laser field. The single electron energy spectrum and wave functions have been found using the effective mass approximation and exact diagonalization technique. Different selection rules are obtained for intraband transitions depending on the direction of incident light polarization. Due to the accidental degeneracy of the laser dressed impurity states the crossings of the curves of the threshold energies and the dipole matrix elements on laser field parameter have been observed. The intraband absorption coefficient is calculated for different locations of hydrogenic donor impurity and different values of intense laser field parameter. The obtained results show that the absorption spectrum can exhibit either a blue- or redshift depending on the impurity location, values of the laser field parameter and direction of incident light polarization. The obtained theoretical results indicate a novel opportunity to tune the performance of new devices, based on the quantum dots and quantum rings and to control their specific properties by means of intense laser and hydrogenic donor impurity.
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