High Operation Speed(10ns/100ns) and Low Read Current (sub-1μA) 2D Floating Gate Transistor

We demonstrate a novel edge-contact floating gate transistor (ECFGT) based on phase engineered MoS 2 for in-memory computing. The ECFGT performs ultra-high operation speed (10ns for programming and 100ns for erasing), low operation voltage (15V) and a significantly reduced power consumption (~11.5 fJ/per program, ~41.3 fJ/per erase). Besides, good endurance (>8×10 ⁴ ) for multi-level conductance is demonstrated, and 5-bit distinguishable states in our device are utilized as synapses for neuromorphic computing. The ultra-small read currents (10 ^-12 ~10 ^-6 A) in the subthreshold mode of the individual devices illuminate the promise of constructing very large-scale neural network through device integration.