材料科学
荧光粉
半最大全宽
发光二极管
尖晶石
红外线的
热稳定性
量子效率
近红外光谱
二极管
能量转换效率
光电子学
光学
物理
量子力学
冶金
作者
Geng Chen,Yahong Jin,Lifang Yuan,Bo Wang,Jiansheng Huo,Hao Suo,Haoyi Wu,Yihua Hu,Feng Wang
标识
DOI:10.1021/acsami.4c03419
摘要
Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold promising potential as next-generation compact, portable, and intelligent NIR light sources. Nonetheless, the lack of high-performance broadband NIR phosphors with an emission peak beyond 900 nm has severely hindered the development and widespread application of NIR pc-LEDs. This study presents a strategy for precise control of energy-state coupling in spinel solid solutions composed of MgxZn1–xGa2O4 to tune the NIR emissions of Cr3+ activators. By combining crystal field engineering and heavy doping, the Cr3+–Cr3+ ion pair emission from the 4T2 state is unlocked, giving rise to unusual broadband NIR emission spanning 650 and 1400 nm with an emission maximum of 913 nm and a full width at half-maximum (fwhm) of 213 nm. Under an optimal Mg/Zn ratio of 4:1, the sample achieves record-breaking performance, including high internal and external quantum efficiency (IQE = 83.9% and EQE = 35.7%) and excellent thermal stability (I423 K/I298 K = 75.8%). Encapsulating the as-obtained phosphors into prototype pc-LEDs yields an overwhelming NIR output power of 124.2 mW at a driving current of 840 mA and a photoelectric conversion efficiency (PCE) of 10.5% at 30 mA, rendering high performance in NIR imaging applications.
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