材料科学
纳米尺度
发光
光电子学
像素
理论(学习稳定性)
光致发光
纳米技术
光学
计算机科学
物理
机器学习
作者
Nirmal Anand,Dipon Kumar Ghosh,Alaeddine Abbès,Mrinmoy Kundu,Md. Afjalur Rahman,Christy Giji Jenson,Roberto Morandotti,Md Zunaid Baten,Sharif Md. Sadaf
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-09-18
标识
DOI:10.1021/acsnano.4c08224
摘要
Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect. Herein, we report nanoscale pixelation of green InGaN/GaN LEDs incorporating strain-engineered ultra-dense nanowire (NW) arrays, corresponding to ∼36,000 pixels per inch. The NW pixel arrays exhibit a stable peak wavelength emission at ∼500 nm for over 3 orders of magnitude of injection current densities (from ∼4 A/cm
科研通智能强力驱动
Strongly Powered by AbleSci AI