材料科学
晶体管
纳米尺度
纳米技术
场效应晶体管
阈下摆动
光电子学
范德瓦尔斯力
异质结
阈下传导
工程物理
电压
电气工程
物理
工程类
量子力学
分子
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2024-01-04
卷期号:7 (2): 1526-1535
标识
DOI:10.1021/acsanm.3c03366
摘要
We report a computational study on the possibility of designing nanoscale organic tunnel field-effect transistors (OTFETs) with a subthreshold swing (SS) much smaller than 60 mV/dec and on-state current (Ion) much larger than that of conventional organic field-effect transistors. The OTFETs are designed on the basis of two-dimensional metallophthalocyanine covalent-organic frameworks (2D MPc-COFs) by employing first-principles and quantum-transport approaches in the ballistic-transport regime. The designed OTFETs with architecture of the van der Waals heterojunction manifest themselves with SS as small as 21 mV/dec and Ion as large as 887.5 μA/μm. These devices outperform most tunnel field-effect transistors reported in the literature and fulfill the IRDS (International Roadmap for Devices and Systems) requirement for both high-performance (HP) and low-power (LP) devices. We reveal that 2D MPc-COFs with moderate band gaps are highly required to optimize the device performance. This study provides an insight into the promising application of 2D COFs beyond conventional organic materials in the rational design of HP and LP nanoscale OTFETs.
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