假电容
材料科学
范德瓦尔斯力
动能
动力学
插层(化学)
化学物理
扩散
离子
活化能
扩散阻挡层
屏障激活
格子(音乐)
纳米技术
热力学
物理化学
分子
密度泛函理论
计算化学
无机化学
图层(电子)
化学
电化学
量子力学
有机化学
声学
电极
物理
超级电容器
作者
Chuan Xia,Zifeng Lin,Yungang Zhou,Chao Zhao,Hanfeng Liang,Patrick Rozier,Zhiguo Wang,Husam N. Alshareef
标识
DOI:10.1002/adma.201803594
摘要
Abstract VO 2 (B) features two lithiation/delithiation processes, one of which is kinetically facile and has been commonly observed at 2.5 V versus Li/Li + in various VO 2 (B) structures. In contrast, the other process, which occurs at 2.1 V versus Li/Li + , has only been observed at elevated temperatures due to large interaction energy barrier and extremely sluggish kinetics. Here, it is demonstrated that a rational design of atomically thin, 2D nanostructures of VO 2 (B) greatly lowers the interaction energy and Li + ‐diffusion barrier. Consequently, the kinetically sluggish step is successfully enabled to proceed at room temperature for the first time ever. The atomically thin 2D VO 2 (B) exhibits fast charge storage kinetics and enables fully reversible uptake and removal of Li ions from VO 2 (B) lattice without a phase change, resulting in exceptionally high performance. This work presents an effective strategy to speed up intrinsically sluggish processes in non‐van der Waals layered materials.
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