Crystallization behaviors of an ultra-thin Ga–Sb film

Upon decreasing ultra-thin Ga16Sb84 films from 10 to 3 nm, the exponential increase in crystallization temperature and electrical resistance ratio are attributed to increased specific interface-energies and inhomogeneous interfacial strain at the interfaces. The specific interface-energies and strain also stabilize the Sb(Ga) phase and suppress phase-separation of the GaSb phase.