太阳能电池
硅
材料科学
光电子学
图层(电子)
聚合物太阳能电池
光伏系统
异质结
纳米技术
电气工程
工程类
作者
Lei Zhao,Chen Zhou,H.L. Li,Hongwei Diao,W.J. Wang
标识
DOI:10.1016/j.solmat.2008.01.018
摘要
Heterojunction with intrinsic thin layer (HIT) solar cells fabricated on p-type silicon substrates usually demonstrate inferior performance than those formed on n-type substrates. The influence of various structure parameters on the performance of the c-Si(p)-based bifacial HIT solar cell, i.e., the TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/a-Si:H(p+)/TCO solar cell, was investigated in detail by computer simulation using the AFORS-HET software. The work function of the transparent conductive oxide was found to be a key factor to affect the solar cell performance. Detailed influence mechanisms were analysed. Accordingly, the design optimization of the bifacial HIT solar cells on c-Si(p) substrates was provided.
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