Physical properties of RF sputtered ITO thin films and annealing effect

退火(玻璃) 材料科学 粒度 扫描电子显微镜 晶格常数 薄膜 电阻率和电导率 表面粗糙度 带隙 衍射 分析化学(期刊) 极限抗拉强度 表面光洁度 复合材料 纳米技术 光学 光电子学 化学 物理 电气工程 工程类 色谱法
作者
L. Kerkache,A. Layadi,El Hadj Dogheche,Denis Rémiens
出处
期刊:Journal of Physics D [Institute of Physics]
卷期号:39 (1): 184-189 被引量:138
标识
DOI:10.1088/0022-3727/39/1/027
摘要

The structural, electrical and optical properties of RF sputtered In2O3 : Sn (ITO) thin films and the effect of post-deposition annealing have been studied. The thickness ranges from 225 to 862 nm. X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM) experiments were performed to study the structure and the surface morphology of these samples. We found that thinner films have a ⟨100⟩ texture and as the film grows the preferred orientation changes from ⟨100⟩ to ⟨111⟩. The lattice parameters are found to be larger than the bulk value, indicating that the samples are under a tensile stress. The grain size increases with increasing thickness. SEM images show a dense granular structure with grains having different shapes and sizes. From AFM images, the average surface roughness (rms) was estimated to be 3.89 nm. The energy gap was found to decrease from 3.65 to 3.50 eV as t increases from 225 to 866 nm. Annealing experiments were done, in the air, at temperature T in the 100–500 °C range. We found that the ⟨111⟩ texture becomes stronger after the annealing treatment. A large increase of the grain size with increasing T is observed. The lattice constant decreases with T to become closer to the bulk value, i.e. annealing seems to relieve the stress present in the as-deposited films; T = 400 °C seems to be the best temperature to obtain practically a stress free sample. We observe a large decrease in the electrical resistivity ρ after annealing. The lowest ρ value (16 × 10−4 Ω cm) was noted in the 699 nm thick sample annealed at 500 °C. The decrease of ρ seems to be the consequence of a larger grain size and a stronger ⟨111⟩ texture.
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