太赫兹辐射
肖特基二极管
二极管
光电子学
材料科学
电气工程
工程物理
计算机科学
工程类
作者
Imran Mehdi,José V. Siles,Choonsup Lee,Erich Schlecht
出处
期刊:Proceedings of the IEEE
[Institute of Electrical and Electronics Engineers]
日期:2017-06-01
卷期号:105 (6): 990-1007
被引量:243
标识
DOI:10.1109/jproc.2017.2650235
摘要
Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz devices. As a low-parasitic device that operates well into the THz range, Schottky diodes provide useful detection and power generation for a number of practical applications. Mixers and multipliers, working as high as ~3 THz, have already been demonstrated. This paper reviews the current status of diode technology, detailing some of the different ways for fabricating THz chips. An overview regarding the current state of technology and performance for THz frequency multipliers and mixers is presented, along with applications enabled by these diodes.
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