Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds

This work studied the structural, thermal, optical and electrical properties of β-Ga2O3 (101) plane with high-density surface dangling bonds for the first time. The high quality (101)-oriented substrate with a full width at half maximum (FWHM) of 90″ in X-ray rocking curve was grown by the edge-defined film-fed growth (EFG) method. The atomic arrangement of (101) surface was terminated either by Ga or O. The dangling bond densities of Ga- and O-terminated surfaces were calculated to be 2.230 × 1015 cm−2 and 2.376 × 1015 cm−2, respectively. The thermal property of the (101) plane was characterized. The Raman active modes of the (101) plane were allowed for selective observation with the variation of polarizing angle. The surface and Schottky barrier height of the (101) plane were estimated to be as low as 1.14 eV and 1.07 eV by optical and electrical measurements, respectively. The activation energy for wet chemical etching was determined to be 0.451 eV for (101) plane and the high etching rate was obtained. By comprehensive comparisons with other common planes, the potential applications of β-Ga2O3 (101) plane should be comparable to the widely used 2̅01 plane.