Self-biased high sensitivity near-infrared photodetector based on nanocrystalline indium nitride film

Most photodetectors based on nanoparticles have been designed to be powered by an external power source, which is used to simulate the photo-created carriers in order to generate a photocurrent. This clearly increases the weight and size of the device. As a consequence, their applications in areas like in-situ wireless environmental sensing and medical therapy monitoring are strictly limited. Constructing self-powered (0 V bias voltage) systems that can operate autonomously, wirelessly, and sustainably is an important research direction for next-generation nanodevices. In this study, a novel near-infrared self-powered photodetector based on indium nitride nanocrystals (InN-NCs) film that operates without an external power source is fabricated. A cost-effective and simple radio frequency technique was used to growth the film onto silicon substrate. The photodetector has good self-powered photo-response properties under NIR (850 nm) light, including high sensitivity (1300) and good response time (rise time 160 ms and decay time 210 ms).