材料科学
纳米线
异质结
杂质
蚀刻(微加工)
硅
散射
壳体(结构)
光电子学
图层(电子)
半导体
表面粗糙度
兴奋剂
各向同性腐蚀
纳米技术
芯(光纤)
化学工程
复合材料
光学
有机化学
化学
工程类
物理
作者
Naoki Fukata,Wipakorn Jevasuwan,Yong-Lie Sun,Yoshimasa Sugimoto
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-12-07
卷期号:33 (13): 135602-135602
被引量:4
标识
DOI:10.1088/1361-6528/ac3fe4
摘要
Control of surface defects and impurity doping are important keys to realizing devices that use semiconductor nanowires (NWs). As a structure capable of suppressing impurity scattering, p-Si/i (intrinsic)-Ge core-shell NWs with radial heterojunctions inside the NWs were formed. When forming NWs using a top-down method, the positions of the NWs can be controlled, but their surface is damaged. When heat treatment for repairing surface damage is performed, the surface roughness of the NWs closely depends on the kind of atmospheric gas. Oxidation and chemical etching prior to shell formation removes the surface damaged layer on p-SiNWs and simultaneously achieves a reduction in the diameter of the NWs. Finally, hole gas accumulation, which is important for suppressing impurity scattering, can be observed in the i-Ge layers of p-Si/i-Ge core-shell NWs.
科研通智能强力驱动
Strongly Powered by AbleSci AI