Technological Characteristics of Vanadyl Sulfate – Porous Silicon Heterojunction

Near nano limit of [vanadium sulfate hydrate / porous silicon] heterojunction using zinc sulfide as a window for solar cell applications were investigated. Nanoparticles of vanadium sulfate hydrate were prepared by the electrochemical method followed by deposited in the form of thin films on bases of conductive glass and porous silicon to study the structural properties. The transmittance, absorbance and energy gap for the active material and the nanolayer window were performed. Grain size and roughness rate were determined via the surface topography test. The electrical parameters were measured, including the electrical conductivity. Nano crystalline porous silicon (PSi) films from p-type silicon (p - Si) wafer are synthesized using electrochemical etching (ECE) process of p-silicon wafer. Effective reflectance was obtained by (ZnS/VOSO₄.H₂O/PSi/p-Si) thin film that display excellent light-trapping at wavelengths ranging from (200 – 900) nm. The energy band gap of (VOSO4.H2O) NPs was calculated and found (4.2 - 5) eV. The average grain size ranged (67.7 – 82.9) nm. The electrical measurements current – voltage (I-V) were examined in dark and illumination conditions, for the heterojunctions fabricated. The efficiency of solar cell was reached (12.96%) while the power conversion efficiency was reached (51.8%).