硒化铜铟镓太阳电池
串联
钙钛矿(结构)
溅射
材料科学
氧化铟锡
能量转换效率
图层(电子)
光电子学
薄膜
化学工程
纳米技术
太阳能电池
复合材料
工程类
作者
Motoshi Nakamura,Ching-Chang Lin,Chie Nishiyama,K. Tada,Takeru Bessho,Hiroshi Segawa
出处
期刊:ACS applied energy materials
[American Chemical Society]
日期:2022-07-08
卷期号:5 (7): 8103-8111
被引量:30
标识
DOI:10.1021/acsaem.2c00620
摘要
Tandem solar cells that combine perovskite (PVK) top cells and Si, Cu(In,Ga)(Se,S)2 (CIGS), and other bottom cells have attracted much attention for increasing the efficiency of solar cells. To use the PVK solar cells as the top cells, their metal electrode needs to be replaced with a transparent conductive layer such as indium tin oxide (ITO) deposited by sputtering, where thermally evaporated MoOx needs to be introduced to protect the underlying hole transport layer (HTL) from sputtering damage. In this study, it was revealed that the effect of ion bombardment during ITO sputtering on widely used spiro-OMeTAD was not detrimental to the device performance, whereas it improved the power conversion efficiency (PCE) owing to the better band alignment caused by oxidation of the HTL. By eliminating the use of the MoOx buffer layer, we were able to develop semi-transparent PVK cells with higher durability and transmittance. PCEs of 19.5% (certified 19.3%) and 26.2% were achieved for a 1 cm2 buffer-free semi-transparent PVK cell and four-terminal PVK/CIGS tandem solar cells, respectively.
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