材料科学
单层
带隙
图层(电子)
光致发光
拉伸应变
光电子学
应变工程
拉伤
直接和间接带隙
光电探测器
极限抗拉强度
纳米技术
复合材料
硅
内科学
医学
作者
Chaoyu Song,Feng‐Ren Fan,Ningning Xuan,Shenyang Huang,Guowei Zhang,Chong Wang,Zhengzong Sun,Hua Wu,Hugen Yan
标识
DOI:10.1021/acsami.7b17247
摘要
Because of the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent band gap, spanning the visible and near infrared regions, and thus recently has been drawing tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structures. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain and observe a salient shift of photoluminescence peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for four- to eight-layer samples, which is much larger than that for the widely studied MoS2 monolayer. Density functional theory calculations well reproduce the observed layer-dependent band gaps and the strain effect and reveal that the shift rate decreases with the increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile two-dimensional electronic and optoelectronic material, which is suitable for tunable light emitters, photodetectors, and other optoelectronic devices.
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