材料科学
溶解
蚀刻(微加工)
钼
纳米线
高锰酸钾
水溶液
高锰酸盐
各向同性腐蚀
透射电子显微镜
铜
氧化物
化学工程
金属
反应离子刻蚀
无机化学
纳米技术
冶金
化学
物理化学
图层(电子)
工程类
作者
Ke Deng,Ivan Erofeev,Angshuman Ray Chowdhuri,Khakimjon Saidov,Zainul Aabdin,Antoine Pacco,Harold Philipsen,Frank Holsteyns,Han Vinh Huynh,Utkur Mirsaidov
出处
期刊:Solid State Phenomena
日期:2023-08-14
卷期号:346: 351-355
摘要
We achieved the controlled recess of molybdenum (Mo), which is alternative interconnect material for copper (Cu), by wet chemical etching. This wet etching process includes two main steps which are chemical oxidation of Mo and its subsequent dissolution, respectively. Firstly, Mo nanowires (NWs) are uniformly oxidized with potassium permanganate (KMnO 4 ) solution in acetone. Secondly, the Mo oxide is dissolved using an aqueous solution of HCl. Mo NWs are characterized through transmission electron microscopy (TEM) imaging after each of the above steps. Cyclic etching experiments including oxidation and dissolution of Mo showed that Mo recess is linear and can be controlled for each cycle, where the etching produced the smooth Mo surface. This controlled Mo recess is crucial for the fabrication of next-generation metal interconnects.
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