Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

材料科学 卷到卷处理 光电子学 柔性电子器件 碳纳米管 聚对苯二甲酸乙二醇酯 纳米技术 薄膜晶体管 印刷电子产品 阈值电压 CMOS芯片 灵活的显示器 电压 丝网印刷 图层(电子) 电气工程 晶体管 复合材料 工程类 墨水池
作者
Jiaqi Li,Min Li,Zhaofeng Chen,Shuangshuang Shao,Weibing Gu,Ying Gu,Yuxiao Fang,Jianwen Zhao
出处
期刊:Nanoscale [The Royal Society of Chemistry]
卷期号:15 (11): 5317-5326 被引量:6
标识
DOI:10.1039/d2nr07209b
摘要

A universal roll-to-roll (R2R) printing approach was developed to construct large area (8 cm × 14 cm) semiconducting single-walled carbon nanotube (sc-SWCNT) thin films on flexible substrates (such as polyethylene terephthalate (PET), paper, and Al foils) at a printing speed of 8 m min-1 using highly concentrated sc-SWCNT inks and crosslinked poly-4-vinylphenol (c-PVP) as the adhesion layer. Bottom-gated and top-gated flexible printed p-type TFTs based on R2R printed sc-SWCNT thin films exhibited good electrical properties with a carrier mobility of ∼11.9 cm2 V-1 s-1, Ion/Ioff ratios of ∼106, small hysteresis, and a subthreshold swing (SS) of 70-80 mV dec-1 at low gate operating voltages (±1 V), and excellent mechanical flexibility. Furthermore, the flexible printed complementary metal oxide semiconductor (CMOS) inverters demonstrated rail-to-rail voltage output characteristics under an operating voltage as low as VDD = -0.2 V, a voltage gain of 10.8 at VDD = -0.8 V, and power consumption as low as 0.056 nW at VDD = -0.2 V. To the best of our knowledge, the electrical properties of the printed SWCNT TFTs (such as Ion/Ioff ratio, mobility, operating voltage, and mechanical flexibility) and printed CMOS inverters based on the R2R printed sc-SWCNT active layer in this work are excellent compared to those of R2R printed SWCNT TFTs reported in the literature. Consequently, the universal R2R printing method reported in this work could promote the development of fully printed low-cost, large-area, high-output, and flexible carbon-based electronics.
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