物理
热电性
极化(电化学)
材料科学
铁电性
物理化学
量子力学
化学
电介质
作者
Yucheng Jiang,Xinglong Ma,Lin Wang,Jinlei Zhang,Zhichao Wang,Run Zhao,Guozhen Liu,Yang Li,Cheng Zhang,Chunlan Ma,Yaping Qi,Lin Wu,Ju Gao
标识
DOI:10.1103/physrevlett.130.196801
摘要
The switchable electric polarization is usually achieved in ferroelectric materials with noncentrosymmetric structures, which opens exciting opportunities for information storage and neuromorphic computing. In another polar system of $p\text{\ensuremath{-}}n$ junction, there exists the electric polarization at the interface due to the Fermi level misalignment. However, the resultant built-in electric field is unavailable to manipulate, thus attracting less attention for memory devices. Here, we report the interfacial polarization hysteresis (IPH) in the vertical sidewall van der Waals heterojunctions of black phosphorus and quasi-two-dimensional electron gas on ${\mathrm{SrTiO}}_{3}$. A nonvolatile switching of electric polarization can be achieved by reconstructing the space charge region (SCR) with long-lifetime nonequilibrium carriers. The resulting electric-field controllable IPH is experimentally verified by electric hysteresis, polarization oscillation, and pyroelectric effect. Further studies confirm the transition temperature of 340 K, beyond which the IPH vanishes. The second transition is revealed with the temperature dropping below 230 K, corresponding to the sharp improvement of IPH and the freezing of SCR reconstruction. This work offers new possibilities for exploring the memory phenomena in nonferroelectric $p\text{\ensuremath{-}}n$ heterojunctions.
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