铁电性
材料科学
无定形固体
极化(电化学)
薄膜
纳米技术
压电响应力显微镜
化学物理
光电子学
结晶学
电介质
化学
物理化学
作者
Muhammad Sheeraz,Chang Won Ahn,Nguyen Xuan Duong,Sung Woo Hwang,Ji‐Soo Jang,Eun‐Young Kim,Yoon Ki Kim,Jae-Yeong Lee,Jong Sung Jin,Jong‐Seong Bae,Myang Hwan Lee,Hyoung‐Su Han,Gi‐Yeop Kim,Shinuk Cho,Tae Kwon Song,Sang Mo Yang,Sang Don Bu,Seung‐Hyub Baek,Si‐Young Choi,Ill Won Kim,Tae Heon Kim
标识
DOI:10.1002/advs.202408784
摘要
Understanding microscopic mechanisms of polarization retention characteristics in ferroelectric thin films is of great significance for exploring unusual physical phenomena inaccessible in the bulk counterparts and for realizing thin-film-based functional electronic devices. Perovskite (K,Na)NbO
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