High-Efficiency TOPCon Solar Cells With Laser-Assisted Localized Boron Doping via Silicon Paste

材料科学 兴奋剂 光电子学 激光器 光学 化学 物理 有机化学
作者
Juan Hong,Jianxin Sun,Xin Liu,Yixuan Huang,Longqing Jiang,Shuangyu Liu,Feng Qian,Honglie Shen,Yang Yang,Rulong Chen,Guanghua Song
出处
期刊:IEEE Journal of Photovoltaics [Institute of Electrical and Electronics Engineers]
卷期号:14 (4): 583-591 被引量:1
标识
DOI:10.1109/jphotov.2024.3380461
摘要

In the present study, we establish a physical model for laser-assisted localized boron doping in N-type tunnel oxide passivated contact (TOPCon) solar cells by employing the fluid dynamics method. Our simulations reveal that a flat-top beam inflicts less thermal damage on silicon than a Gaussian beam at a constant laser energy density. Additionally, we observe an acceleration in the flow rate of molten silicon in the molten pool as the laser energy density increases. This acceleration facilitates efficient doping of boron atoms into the silicon substrate, albeit accompanied by an expansion of the local thermal damage range. In light of these findings, we utilized boron-doped silicon paste as a doping source in experiments conducted on a 15 MW TOPCon solar cells production line employing four distinct laser energy densities. The experiments yielded a reduction in the sheet resistance to 81.9 Ω/cm in the boron-doped regions, an increase in the peak boron doping concentration to 1.08 × 10 19 atoms/cm 3 , and a doping depth of 2.38 μ m. Consequently, the highest efficiency enhancement recorded was 0.14%, culminating in an efficiency of 25.06%. This research outlines the mechanism of the laser-assisted localized boron doping process and provides insights for enhancing the efficiency of TOPCon solar cells.
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