材料科学
电致发光
钙钛矿(结构)
光电子学
光致发光
发光二极管
钝化
纳米晶
卤化物
量子效率
纳米技术
图层(电子)
化学工程
无机化学
化学
工程类
作者
Aditya Mishra,Riya Bose,Yangzi Zheng,Weijie Xu,Reema McMullen,Abhas Mehta,Moon J. Kim,Julia W. P. Hsu,Anton V. Malko,Jason D. Slinker
标识
DOI:10.1002/adma.202203226
摘要
Abstract The 0D cesium lead halide perovskite Cs 4 PbBr 6 has drawn remarkable interest due to its highly efficient robust green emission compared to its 3D CsPbBr 3 counterpart. However, seizing the advantages of the superior photoluminescence properties for practical light‐emitting devices remains elusive. To date, Cs 4 PbBr 6 has been employed only as a higher‐bandgap nonluminescent matrix to passivate or provide quantum/dielectric confinement to CsPbBr 3 in light‐emitting devices and to enhance its photo‐/thermal/environmental stability. To resolve this disparity, a novel solvent engineering method to incorporate highly luminescent 0D Cs 4 PbBr 6 nanocrystals (perovskite nanocrystals (PNCs)) into a 3D CsPbBr 3 film, forming the active emissive layer in single‐layer perovskite light‐emitting electrochemical cells (PeLECs) is designed. A dramatic increase of the maximum external quantum efficiency and luminance from 2.7% and 6050 cd m −2 for a 3D‐only PeLEC to 8.3% and 11 200 cd m −2 for a 3D–0D PNC device with only 7% by weight of 0D PNCs is observed. The majority of this increase is driven by the efficient inherent emission of the 0D PNCs, while the concomitant morphology improvement also contributes to reduced leakage current, reduced hysteresis, and enhanced operational lifetime (half‐life of 129 h), making this one of the best‐performing LECs reported to date.
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