Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure

Al 2 O 3 films deposited by atomic layer deposition technique have been widely used in the field of next generation high performance electronic devices. However, these films often suffer from blistering during heat treatment, which can significantly degrade device performance. In order to understand the cause of this phenomenon, various groups have proposed different physical models, but no definitive model has been proposed yet due to lack of concrete evidence. In this paper, we report on the successful analysis of the components inside the blisters using spectroscopic approach.