压力(语言学)
可靠性工程
材料科学
估计
可靠性(半导体)
计算机科学
风险因素
互连
工程类
物理
计算机网络
医学
内科学
哲学
功率(物理)
量子力学
语言学
系统工程
作者
Heng Yao,Patrick Justison,J. Poppe
出处
期刊:International Reliability Physics Symposium
日期:2013-04-01
被引量:7
标识
DOI:10.1109/irps.2013.6531955
摘要
SM reliability data have been treated qualitatively to define pass or fail criteria in the past. However, realistic quantitative stress-induced-voiding (SIV) risk analysis and lifetime estimates for products were not available due to lack of quantitative data and a suitable SM model. In this paper, we provide quantitative analysis of SIV risk based on geometry factors and further establish a comprehensive SM model for SM lifetime estimation for 32nm technology and beyond. An SIV risk factor is defined to quantify the relative risks of Cu BEOL interconnect structures. Based on the new SM model, an effective geometry factor was found for an accelerated SM test method to perform SM lifetime estimation from measurable SM data.
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