材料科学
三元运算
电阻随机存取存储器
共轭体系
热稳定性
热重分析
结晶度
聚合物
纳米技术
光电子学
化学工程
物理化学
复合材料
计算机科学
化学
工程类
程序设计语言
电极
作者
Xue‐Feng Cheng,Erbo Shi,Xianghui Hou,Jie Shu,Jinghui He,Hua Li,Qingfeng Xu,Na‐Jun Li,Dongyun Chen,Jianmei Lu
标识
DOI:10.1002/aelm.201700107
摘要
Ternary resistive random access memory (RRAM) devices are fabricated from 1D d‐π conjugated coordination polymer chains, which are synthesized via the coordination between Ni(II) salts and benzenetetramine or 3,3′,4,4′‐biphenyltetramine in a solution process. The as‐fabricated devices can retain their memory states for as long as three months at room temperature or work for at least 10 000 s at 150 °C, which is the highest working temperature reported for a ternary RRAM at the time of writing this paper. Thermogravimetric analysis indicates good thermal stability of these two materials because of their good crystallinity and strong intermolecular interaction. The long‐term and high‐temperature stability makes 1D conjugated coordination polymer chains a promising candidate for use as next‐generation material for high‐density data storage via RRAM techniques.
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