回波损耗
放大器
宽带
材料科学
电气工程
微波食品加热
电子工程
CMOS芯片
光电子学
工程类
电信
天线(收音机)
作者
Jin‐Cheol Jeong,Dong-Pil Jang,Dong-Hwan Shin,In‐Bok Yom,Jae-Duk Kim,Wang-Yong Lee,Changhoon Lee
出处
期刊:Etri Journal
[Electronics and Telecommunications Research Institute]
日期:2016-10-01
卷期号:38 (5): 972-980
被引量:13
标识
DOI:10.4218/etrij.16.2615.0020
摘要
An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-μm AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than over a wide frequency range.
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