材料科学
铁电性
非易失性存储器
场效应晶体管
铁电电容器
石墨烯
纳米技术
光电子学
晶体管
电场
偶极子
电气工程
电介质
电压
量子力学
物理
工程类
有机化学
化学
作者
Siyuan Wan,Yue Li,Wei Li,Xiaoyu Mao,Chen Wang,Chen Chen,Jiyu Dong,Anmin Nie,Jianyong Xiang,Zhongyuan Liu,Wenguang Zhu,Hualing Zeng
标识
DOI:10.1002/adfm.201808606
摘要
Abstract High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In 2 Se 3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of ultrathin α‐In 2 Se 3 and graphene is demonstrated. The resistance of the graphene channel in the FeFET is effectively controllable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α‐In 2 Se 3 . The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top‐gate ferroelectric. The 2D FeFET can be randomly rewritten over more than 10 5 cycles without losing the nonvolatility. The approach demonstrates a prototype of rewritable nonvolatile memory with ferroelectricity in van der Waals 2D materials.
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