High peak power passively Q‐switched 2 μm solid‐state laser based on a MoS2 saturated absorber

Abstract A 2 μm passively Q‐switched Tm:YAP solid‐state laser with MoS 2 as saturated absorber was demonstrated in this work. MoS 2 two‐dimensional materials were prepared by using the method of chemical vapor deposition. The laser achieved high peak power of 21.2 W and high single pulse energy of 19.5 μJ, while maintaining a short pulse width of 916 ns. This is the first time that the peak power of a Tm:TAP solid‐state laser based on a MoS 2 saturated absorber has reached 21.2 W. The beam quality factor was M 2 x = 1.08 and M 2 y = 1.10.