Influence of channel thickness on charge transport behavior of multi-layer indium selenide (InSe) field-effect transistors

Atomically thin Van der Waals solids that exhibit direct band gap in their few layer form can substantially impact the field of two dimensional (2D) materials based electronic devices and related applications. Here we report on electronic charge transport behavior of multi layer n-type InSe field-effect transistor (FET) devices fabricated on SiO2/Si substrate with seven different channel thicknesses, t > 20 nm, well within its direct band gap regime. Through gate dependent conductivity measurements over a wide range of temperatures (T; 20 K