High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

High-performance aluminum-zinc-oxide (AZO) thin-film transistors (TFTs) were fabricated on glass substrates using RF magnetron sputtering at different powers (70, 100, 150, and 200 W). Device performances have a large process window for the sputtering power. Among all the devices, the TFT of AZO film prepared at 70 W as channel layer exhibit excellent I-V characteristics, such as saturation mobility (μsat) of 13.167 cm ² /Vs, a steep subthreshold swing of 131 mV/decade, a high ION/IOFF ratio of 1.63 × 10 ⁹ . In addition, the devices prepared at 70 W also show good output characteristics, high uniformity, and excellent bias-stress stability. The threshold voltage shift (ΔVth) under a positive/negative gate stress was 0.7 V/-0.8 V.