化学气相沉积
范德瓦尔斯力
异质结
堆积
成核
材料科学
纳米技术
过渡金属
化学工程
化学
光电子学
催化作用
分子
有机化学
工程类
作者
Yizhang Ren,Ling Zhang,Xukun Zhu,Huimin Li,Qizhi Dong,Song Liu
标识
DOI:10.1088/1361-648x/ac6309
摘要
Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.
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