石墨烯
异质结
材料科学
费米能级
兴奋剂
电子
石墨烯纳米带
密度泛函理论
单层
凝聚态物理
费米能量
纳米技术
物理
光电子学
量子力学
作者
Chang-Gyu Choi,Jung Hwan Kim,Hyeong-Kyu Choi,Janghwan Cha,Suklyun Hong
标识
DOI:10.1016/j.cap.2021.04.008
摘要
Until now, many attempts have been made to dope graphene in various ways, but each method turned out to have pros and cons. In this study, to overcome the limitations of doping methods, yttrium hypocarbide (Y2C) is investigated as one prospective material to dope graphene, using density functional theory calculations. In monolayer Y2C, the anionic electrons localized away from Y atomic layers are confirmed to contribute to occupied states near the Fermi level. Next, we investigate the electronic structure of graphene in heterojunction with Y2C. Anionic electrons of Y2C occupy the empty states of graphene in graphene/Y2C heterostructure, which makes the Dirac cone of graphene located at about 1.7 eV below the Fermi level. Such charge transfer of anionic electrons to graphene and the flatness of electric cloud of anionic electrons leads to evenly n-doped graphene in graphene/Y2C heterostructure. This suggests that Y2C is a good candidate to dope graphene.
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